TEXTURE EVOLUTION IN SI SIC LAYERED STRUCTURES DEPOSITED ON SI(001) BY CHEMICAL-VAPOR-DEPOSITION/

Texture evolution in Si/SiC multilayers deposited by atmospheric press ure chemical vapor deposition on carbonized Si(001) substrates was inv estigated using x-ray diffraction and transmission electron microscopy . SiC layers were epitaxial and (001)-oriented. Si layers deposited on the SiC exhibited a columnar structure with predominantly (110) orien tation which could be related to the nucleation. Orientational relatio nships were Si[11(1) over bar] parallel to SiC[110] and Si[112] parall el to SiC[110]. Also, a low density of (112)-oriented columns was pres ent. Extensive twinning on the vertical(lll) planes within the Si colu mns led to domains of hexagonal stacking up to 10 nm in size with the presence of 2H-Si and 4H-Si. Subsequent SiC layer growth on the (110)- oriented Si layer resulted in a (110)-oriented SiC layer if the Si lay er was carbonized prior to growth.