QUANTUM TRANSPORT AND I-V CHARACTERISTICS OF QUANTUM-SIZE FIELD-EFFECT TRANSISTOR

Quantum electron transport is expected to occur in nanometer-size held effect transistors. We show that the amplitude of the transmitted wav e equals 1 only when the electric field in the conducting channel is z ero. By reducing the dimension of the quantum transport from bulk to a two-dimensional electron gas system, and further to a one-dimensional quantum wire, the current-bias relation is not affected while the gat e control over the drain current weakens. Starting from the Poisson an d Schrodinger equations, we have studied numerically the quantum wave transport through the conduction channel where scattering processes ar e neglected, the I-V characteristic of a typical heterojunction high e lectron mobility transistor shows a linear relationship between drain current and voltage at low drain bias, but the drain current decreases with increasing drain voltage at a high bias. (C) 1998 Academic Press .