LOCALIZED EXCITONIC STATES IN ZNS-ZNSE SINGLE QUANTUM-WELLS

We present low temperature photoluminescence spectra taken from an 11 Angstrom ZnSe quantum well in ZnS barriers. The samples are grown by t he technique of photo-assisted vapour phase epitaxy (PAVPE) and the sp ectra show evidence for interface disorder. The observed dependences o f the excitonic luminescence on excitation power and temperature are i nterpreted by a model involving excitonic localization below an excito n mobility edge. This mobility edge is measured for these samples to b e 6 meV below the free exciton energy in the ideal quantum well. (C) 1 998 Academic Press.