ELECTROCHEMICAL DEPOSITION OF METALS ONTO SILICON

Citation
G. Oskam et al., ELECTROCHEMICAL DEPOSITION OF METALS ONTO SILICON, Journal of physics. D, Applied physics, 31(16), 1998, pp. 1927-1949
Citations number
102
Categorie Soggetti
Physics, Applied
ISSN journal
00223727
Volume
31
Issue
16
Year of publication
1998
Pages
1927 - 1949
Database
ISI
SICI code
0022-3727(1998)31:16<1927:EDOMOS>2.0.ZU;2-U
Abstract
The general concepts governing the electrochemical deposition of metal films onto semiconductors are discussed. Deposition onto semiconducto r surfaces is complicated due to the band structure of the semiconduct or, which affects both the thermodynamics and the kinetics of metal de position processes. The influence of the potential distribution at the semiconductor/solution interface on the charge transfer mechanisms in volved in deposition of metals is discussed. Models for electrochemica l nucleation and growth are described and the influence of the unique physical properties of semiconductors is analysed. Finally, we present recent results for electrochemical deposition of gold, copper and pla tinum onto n-type silicon.