ENHANCED ACTIVATION OF IMPLANTED DOPANT IMPURITY IN HYDROGENATED CRYSTALLINE SILICON

We propose a physical model for enhanced activation of (implanted) dop ant atoms in crystalline Si when the Si vacancy contains atomic hydrog en. Calculations of the potential barriers for inserting the interstit ial phosphorus dopant into both hydrogenated and unhydrogenated vacanc y sites of the crystalline Si dependent on the charge state of the hyd rogenated vacancy, the hydrogen localization, and the transport direct ion of the interstitial atom to the vacancy are reported using the sel f-consistent field molecular-orbital linear combination of atomic orbi tals technique in the neglect of diatomic differential overlap approac h. The results suggest a decrease of the activation temperature for th e phosphorus atoms by more than 300 degrees C.