TRANSITION FROM DIRECT TO INDIRECT BAND-STRUCTURE INDUCED BY THE ALSBLAYER INSERTED IN THE GASB ALSB QUANTUM-WELL/

Authors
WANG T KIESELING F FORCHEL A
Citation
T. Wang et al., TRANSITION FROM DIRECT TO INDIRECT BAND-STRUCTURE INDUCED BY THE ALSBLAYER INSERTED IN THE GASB ALSB QUANTUM-WELL/, Physical review. B, Condensed matter, 58(7), 1998, pp. 3594-3596
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
7
Year of publication
1998
Pages
3594 - 3596
Database
ISI
SICI code
0163-1829(1998)58:7<3594:TFDTIB>2.0.ZU;2-R
Abstract
A 6.5-nm coupled double GaSb/AlSb quantum well separated by 1, 2, 3 or 4 monolayers AlSb has been investigated by photoluminescence spectros copy at a temperature of 2 K. When the AlSb layer thickness is more th an 1 monolayer (ML), this system changes from direct to indirect energ y-band structure, which is well described by a model based on a finite potential well and transmission probability.