J. Frank et al., ENHANCEMENT OF SENSITIVITY AND CONDUCTIVITY OF SEMICONDUCTING GA2O3 GAS SENSORS BY DOPING WITH SNO2, Sensors and actuators. B, Chemical, 49(1-2), 1998, pp. 110-114
The use of high temperature operated metal oxides, e.g. Ga2O3 thin fil
ms, for gas sensors shows promising properties in terms of reproducibi
lity, long term stability against interfering gases and low cross sens
itivity to humidity. It is shown that by employing SnO2 (0.1-3%(At)) a
s doping material, a very effective donor for sputter deposited polycr
ystalline Ga2O3 thin films has been found which allows an increase in
conductivity of up to two orders of magnitude, as well as an enhanceme
nt of the gas-sensitivity. This is the basis for a significant reducti
on of the sensor chip size to obtain a reduction in the heating power.
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