SEMICONDUCTOR-LASERS EMITTING AT THE 0.98 MU-M WAVELENGTH WITH RADIATION COUPLING-OUT THROUGH THE SUBSTRATE

Authors
ZVONKOV NB ZVONKOV BN ERSHOV AV USKOVA EA MAKSIMOV GA
Citation
Nb. Zvonkov et al., SEMICONDUCTOR-LASERS EMITTING AT THE 0.98 MU-M WAVELENGTH WITH RADIATION COUPLING-OUT THROUGH THE SUBSTRATE, Quantum electronics, 28(7), 1998, pp. 605-607
Citations number
8
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Quantum electronics → ACNP
ISSN journal
10637818
Volume
28
Issue
7
Year of publication
1998
Pages
605 - 607
Database
ISI
SICI code
1063-7818(1998)28:7<605:SEAT0M>2.0.ZU;2-G
Abstract
A semiconductor laser based on a new design of the InGaAs/GaAs/InGaP s tructure was developed and investigated experimentally. The radiation from this laser was coupled out through the substrate, which ensured a narrow angular distribution in a plane perpendicular to the p-n junct ion. An output power of 0.63 W in a beam with the radiation divergence of 1.2 degrees in this plane was obtained.