AN OPTICAL AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFORMATION-INDUCED DEFECTS IN 6H-SIC

Citation
Av. Samant et al., AN OPTICAL AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFORMATION-INDUCED DEFECTS IN 6H-SIC, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 78(3), 1998, pp. 737-746
Citations number
10
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
ISSN journal
13642804
Volume
78
Issue
3
Year of publication
1998
Pages
737 - 746
Database
ISI
SICI code
1364-2804(1998)78:3<737:AOATES>2.0.ZU;2-#
Abstract
Deformation tests were conducted on 6H-SiC in an orientation favourabl e for activation of the (2 (1) over bar (1) over bar 0)(0001) slip sys tem. Tests were conducted at temperatures between 550 degrees C and 14 00 degrees C and at a strain rate of 3.1 x 10(-5) s(-1). Subsequent to the deformation tests, optical and transmission electron microscopy w ere used to study the deformation-induced defects such as stacking fau lts, deformation kinks, and cracks. Based on these observations, a mec hanism for the formation of deformation kinks, and nucleation and prop agation of cracks, and the temperature dependence of this mechanism is proposed.