Av. Samant et al., AN OPTICAL AND TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DEFORMATION-INDUCED DEFECTS IN 6H-SIC, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 78(3), 1998, pp. 737-746
Deformation tests were conducted on 6H-SiC in an orientation favourabl
e for activation of the (2 (1) over bar (1) over bar 0)(0001) slip sys
tem. Tests were conducted at temperatures between 550 degrees C and 14
00 degrees C and at a strain rate of 3.1 x 10(-5) s(-1). Subsequent to
the deformation tests, optical and transmission electron microscopy w
ere used to study the deformation-induced defects such as stacking fau
lts, deformation kinks, and cracks. Based on these observations, a mec
hanism for the formation of deformation kinks, and nucleation and prop
agation of cracks, and the temperature dependence of this mechanism is
proposed.