INVESTIGATIONS OF GAAS GAPAS SUPERLATTICES BY MULTIPLE-ANGLE-OF-INCIDENCE ELLIPSOMETRY/

Authors
DMITRUK NL GOREA OS MIKHAILIK TA ROMANIUK VR ZABASHTA LA
Citation
Nl. Dmitruk et al., INVESTIGATIONS OF GAAS GAPAS SUPERLATTICES BY MULTIPLE-ANGLE-OF-INCIDENCE ELLIPSOMETRY/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 7-8, 1998, pp. 57-65
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
7-8
Year of publication
1998
Pages
57 - 65
Database
ISI
SICI code
0204-3467(1998)7-8:<57:IOGGSB>2.0.ZU;2-H
Abstract
We present the results of multiple-angle-of-incidence (MAI) ellipsomet ry for strained GaAs/GaPxAs1-x superlattices (SLs) with the compositio n x = 0.4 and with different layer thickness in the range of 8-80 nm, From MAI measurements thickness and optical constants of SL films have been calculated by solving the inverse ellipsometric problem. The ani sotropic film model of the SL and capping isotropic layer were taken i nto account. These results are compared with those obtained by far-inf rared reflection spectroscopy in the reststrahlen band region.