LASER MOLECULAR-BEAM EPITAXY SYSTEM AND ITS KEY TECHNOLOGIES

Authors
YANG GZ LU HB ZHOU YL LEI ZL CHEN ZH
Citation
Gz. Yang et al., LASER MOLECULAR-BEAM EPITAXY SYSTEM AND ITS KEY TECHNOLOGIES, Acta physica Sinica, 7(8), 1998, pp. 623-627
Citations number
6
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
7
Issue
8
Year of publication
1998
Pages
623 - 627
Database
ISI
SICI code
1000-3290(1998)7:8<623:LMESAI>2.0.ZU;2-T
Abstract
The laser molecular beam epitaxy system and its key technologies have been successfully developed in China. Atomically regulated unit-cell b y unit-cell homoepitaxial SrTiO3 (STO) and heteroepitaxial BaTiO3 (BTO ) films and STO/BTO superlattices were fabricated on STO (100) substra tes by the laser molecular beam epitaxy. The fine streak patterns and more than 1000 cycles of undamping intensity oscillation were obtained by using in-situ reflection high-energy electron diffraction. The sur faces of films are atomically smooth.