OPTICALLY INDUCED MIGRATION OF INTERSTITIAL ZINC IN ZNSE - CAUGHT IN THE ACT

Citation
Kh. Chow et Gd. Watkins, OPTICALLY INDUCED MIGRATION OF INTERSTITIAL ZINC IN ZNSE - CAUGHT IN THE ACT, Physical review letters, 81(10), 1998, pp. 2084-2087
Citations number
24
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
81
Issue
10
Year of publication
1998
Pages
2084 - 2087
Database
ISI
SICI code
0031-9007(1998)81:10<2084:OIMOIZ>2.0.ZU;2-E
Abstract
Optically detected EPR studies of zinc-vacancy-zinc-interstitial Frenk el pairs produced by 2.5 MeV electron irradiation at 4.2 K in ZnSe rev eal transformations between pairs of differing separations induced by optical excitation at cryogenic temperatures. The interstitial is iden tified as the mobile constituent by directly observing its conversion between T-d sites surrounded by four Se atoms and those surrounded by four Zn atoms. The interstitials, therefore, have been caught in the a ct of a single recombination-enhanced diffusion half jump, uniquely re vealing the exact path taken in the one-jump diffusion process.