Kh. Chow et Gd. Watkins, OPTICALLY INDUCED MIGRATION OF INTERSTITIAL ZINC IN ZNSE - CAUGHT IN THE ACT, Physical review letters, 81(10), 1998, pp. 2084-2087
Optically detected EPR studies of zinc-vacancy-zinc-interstitial Frenk
el pairs produced by 2.5 MeV electron irradiation at 4.2 K in ZnSe rev
eal transformations between pairs of differing separations induced by
optical excitation at cryogenic temperatures. The interstitial is iden
tified as the mobile constituent by directly observing its conversion
between T-d sites surrounded by four Se atoms and those surrounded by
four Zn atoms. The interstitials, therefore, have been caught in the a
ct of a single recombination-enhanced diffusion half jump, uniquely re
vealing the exact path taken in the one-jump diffusion process.