LOW-TEMPERATURE PRE-METAL DIELECTRICS FOR FUTURE ICS

Authors
NAG S RAMAMURTHY R LEI WJ MONTEIL C HICKEY M
Citation
S. Nag et al., LOW-TEMPERATURE PRE-METAL DIELECTRICS FOR FUTURE ICS, Solid state technology, 41(9), 1998, pp. 69
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
41
Issue
9
Year of publication
1998
Database
ISI
SICI code
0038-111X(1998)41:9<69:LPDFFI>2.0.ZU;2-I
Abstract
Reduced thermal budgets for pre-metal dielectric deposition mandate a change to plasma-based chemical vapor deposition processes. A high-den sity-plasma-CVD phosphosilicate glass process is an attractive solutio n due to its lower deposition temperature and good gap-fill. Electrica l tests show the plasma process does not degrade device performance.