MICROWAVE PLASMA-ASSISTED CVD IN THE SI-C-H-AR SYSTEM - EFFECT OF PROCESS PARAMETERS

Authors
SCORDO S DUCARROIR P THOMAS L BERJOAN R JAUBERTEAU JL
Citation
S. Scordo et al., MICROWAVE PLASMA-ASSISTED CVD IN THE SI-C-H-AR SYSTEM - EFFECT OF PROCESS PARAMETERS, Annales de chimie, 23(5-6), 1998, pp. 733-742
Citations number
33
Categorie Soggetti
Chemistry,"Material Science
Journal title
Annales de chimie → ACNP
ISSN journal
01519107
Volume
23
Issue
5-6
Year of publication
1998
Pages
733 - 742
Database
ISI
SICI code
0151-9107(1998)23:5-6<733:MPCITS>2.0.ZU;2-G
Abstract
Silicon carbide based films, with a growth rate from 3 to 60 mu m/h, h ave been obtained by microwave plasma assisted chemical vapor depositi on (PACVD) using an argon/tetramethylsilane mixture. The effects of th e main experimental parameters (substrate position and temperature, in put gas mixture) on the films composition, growth rate and mechanical properties have been correlated to the plasma characteristics.