OPTICAL-EMISSION SPECTROSCOPY OF RF AND MICROWAVE PLASMAS USED FOR CHEMICAL-VAPOR-DEPOSITION IN THE SI-C-H-AR SYSTEM

This work highlights optical emission spectroscopy (OES) results used for a better understanding of processes occuring in radiofrequency and microwave plasma enhanced chemical vapor deposition in the Si-C-H-Ar gas system, Optical lines such as Si+ and H-alpha (lambda = 634.71; 65 6.29 nm), C-2 (lambda = 516.52 nm), CH and SiH (lambda = 431.42; 412.8 0 nm) can be considered as tracers of chemical species in the plasmas. Process parameters (growth rate, composition, residual stresses in th e films and gas temperature) have their optical signatures (respective ly : Si+, H-alpha lines and rotational G(1)Sigma(+)g --> B(1)Sigma(+)u structure of H-2).