THE DIFFERENT MODELING ROUTES FOR SIC DEPOSITION BY VAPOR TECHNIQUES

The different macroscopic modelling routes and chemical databases are reviewed for the growth of silicon carbide from the vapour phase in th e Si-C-H-Ar system. Theses databases have been built up by experts ove r many years through the critical assessment of primary experimental d ata and ab-initio calculations. The thermodynamic modelling route addr esses several important issues with respect to vapour deposition techn iques. This approach is a useful tool in understanding the complex che mistry involved during the growth, but should be used with careful att ention to the assumptions underlying the application. The transport mo delling approach extends the previous analysis to dynamical systems. I t is based on the conservation equations for momentum and heat transfe r combined with mass transfer including thermodiffusion and chemical r eactions based on thermodynamic and kinetic data. In addition to empir ical, lumped chemical kinetic models, we propose a new modelling route linking transfers models with local thermochemical equilibrium (LTCE) computations. The modelling results have been validated with the help of the SiC sublimation technique for the transfer-LTCE concept, and o f the chemical vapour deposition technique for lumped chemistry models . The simulated results allow the quantification of the different mode lling proposals.