Absolute excitation rate coefficients have been determined experimenta
lly for all excited states up to 1s(2)5f of the lithium-like ion Si XI
I using a well diagnosed theta-pinch plasma. A new method has been dev
eloped to determine the most crucial quantity of these measurements, t
he absolute concentration of the silicon ions in the plasma. For this
we made use of the fact that sufficiently high lying levels are in par
tial local thermodynamic equilibrium (PLTE) with the ground state of t
he next higher ionization stage. A theoretical population model has be
en developed to study the influence of the different processes that mi
ght contribute to the population of the different levels at our plasma
parameters. For most levels the theoretical excitation rate coefficie
nts were found to be in fair agreement with the theoretical ones. The
error of the experimentally determined excitation rate coefficients is
of the order of +/- 50%.