CARRIER ACCUMULATION IN MOMENTUM-SPACE AND RELATED PHENOMENA UNDER INTENSE MICROWAVE FIELDS IN SEMICONDUCTORS - II - QUASI-ONE-DIMENSIONAL SYSTEMS

When the dominant scattering mechanism is optical phonon emission; the application of appropriately intense microwave fields is expected to cause an accumulated distribution of carriers in momentum space and re lated peculiar phenomena, as described in a previous paper which treat ed usual bulk semiconductors. It is shown here that the carrier accumu lation effect is more pronounced in one-dimensional systems in the dir ection of the microwave fields, because of the absence of transverse d egrees of freedom. Computations are made for electrons in GaAs crystal s confined by strong magnetic fields of 12 similar to 24 T. The result s show that peculiar de field responses including absolute negative re sistance are expected under realistic experimental conditions, e.g. in samples with more than 10(14) cm(-3) charged impurity concentration.