ABOUT THE NECESSITY OF A NICKEL LAYER TO OBTAIN PHOTOCONDUCTIVE MOSE2

Authors
OUERFELLI J JLAIEL Z GUETTARI N GOURMELON E POUZET J BERNEDE JC KHELIL A ZOATER M CONAN A
Citation
J. Ouerfelli et al., ABOUT THE NECESSITY OF A NICKEL LAYER TO OBTAIN PHOTOCONDUCTIVE MOSE2, EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 3(2), 1998, pp. 135-139
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS → ACNP
ISSN journal
12860042
Volume
3
Issue
2
Year of publication
1998
Pages
135 - 139
Database
ISI
SICI code
1286-0042(1998)3:2<135:ATNOAN>2.0.ZU;2-H
Abstract
A process to obtain photoconductive MoSe2 thin films is described. The films are obtained by annealing a multilayer Mo/Se/Mo...Se/Mo/Se stru cture evaporated onto a thin Ni layer. The films are stoichiometric an d textured with the c axis of the crystallites perpendicular to the pl ane of the substrate. The films are photoconductive with a photocurren t of about 80 mu A.