INNER SURFACE ION-IMPLANTATION USING DEFLECTING ELECTRIC-FIELD

Citation
Ag. Liu et al., INNER SURFACE ION-IMPLANTATION USING DEFLECTING ELECTRIC-FIELD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 143(3), 1998, pp. 306-310
Citations number
10
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
ISSN journal
0168583X
Volume
143
Issue
3
Year of publication
1998
Pages
306 - 310
Database
ISI
SICI code
0168-583X(1998)143:3<306:ISIUDE>2.0.ZU;2-D
Abstract
Because of its non line-of-sight nature, researchers have recently foc used on plasma immersion ion implantation (PIII) to enhance the proper ties of inner surfaces of industrial components to combat wear and cor rosion. However, theoretical simulation has shown a relatively dim pro spect because of the limitation on impact energy and retained dose. In this paper, we describe a procedure to improve the efficiency of inne r surface implantation by using a symmetrical experimental setup and d eflecting electric field. Improvements of 43% and 71% are observed for the implantation depth and retained dose, respectively. Since a large portion of the ions implanted into the interior surface originate fro m outside of the bore, a longer pulse-width will be more beneficial. ( C) 1998 Elsevier Science B.V. All rights reserved.