ELECTRON FOCUSING IN BACKSCATTERING FROM SINGLE-CRYSTAL SI(100)

Diffraction patterns produced by quasi-elastically backscattered elect rons focused in a thin single-crystal Si(100)2 x 1 near-surface layer have been studied. The measurements performed in the 0.6-2-keV range a re compared with calculations made in the single-scattering approximat ion. This model is shown to describe adequately the experiment. An ana lysis is made of the relation among the diffraction patterns observed for different silicon faces, and of the effect of the primary-electron beam orientation. The relations governing the focusing of quasi-elast ically backscattered electrons escaping from the crystal along the mai n crystallographic directions have been established. The various aspec ts of the effect for backscattered electrons undergoing inelastic inte raction with the electron subsystem of the crystal have been investiga ted, (C) 1998 American Institute of Physics.