FORMATION OF ZERO-DIMENSIONAL HOLE STATES DURING MOLECULAR-BEAM EPITAXY OF GE ON SI(100)

The characteristic features of electronic spectra in Ge/Si (100) heter ostructures obtained by molecular-beam epitaxy are investigated by cap acitance spectroscopy. It is observed that the self-organization of a Ge film into an island film when the effective germanium thickness exc eeds six monolayers is accompanied by the appearance of hole bound sta tes, which can be attributed to size quantization and the Coulomb inte raction of carriers in the array of Ge quantum dots. (C) 1998 American Institute of Physics.