CHARGE COLLECTION EFFICIENCY IN HEAVILY IRRADIATED SILICON DIODES

Authors
BEATTIE L BRODBECK TJ CHILINGAROV A HUGHES G RATOFF P SLOAN T
Citation
L. Beattie et al., CHARGE COLLECTION EFFICIENCY IN HEAVILY IRRADIATED SILICON DIODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 412(2-3), 1998, pp. 238-246
Citations number
16
Categorie Soggetti
Nuclear Sciences & Tecnology","Physics, Particles & Fields","Instument & Instrumentation",Spectroscopy
Journal title
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment → ACNP
ISSN journal
01689002
Volume
412
Issue
2-3
Year of publication
1998
Pages
238 - 246
Database
ISI
SICI code
0168-9002(1998)412:2-3<238:CCEIHI>2.0.ZU;2-K
Abstract
The Charge Collection Efficiency (CCE) has been measured for minimum i onizing particles and for alpha-particle illuminations from both sides for planar diodes irradiated by neutrons and pions with fluences up t o 3 x 10(14) cm(-2). Geometrical effects on the CCE for partially depl eted detectors are deduced from the data as well as trapping effects f or electrons and holes. (C) 1998 Elsevier Science B.V. All rights rese rved.