INVESTIGATION OF RADIATION DEFECTS IN N(-P-P(+) PLANAR SILICON NEUTRON DETECTORS())

Deep level transient spectroscopy (DLTS), C-V and I-V measurements wer e carried out on silicon n(+)-p-p(+) neutron detectors using the react ion Li-6(n,alpha)H-3. The samples were investigated before and after i rradiation with nuclear power reactor neutrons with fluence 1.0 x 10(1 4) n/cm(2). DLTS spectra of detectors wrapped in a cadmium foil during irradiation showed the presence of three major deep levels, while in the detectors not protected by foil, 6 levels were present. C-V measur ements showed considerable difference between the C-V curves of detect ors worked under these two conditions. The peculiarities were explaine d by the presence of negatively charged defects in the space-charge re gion of the diodes, created by the alpha-particles and H-3 produced fr om the converting reaction Li-6(n,alpha)H-3. (C) 1998 Elsevier Science B.V. All rights reserved.