The effect of doping bismuth telluride with tin, on its electrophysica
l properties, has been studied. It is shown that the main features in
the transport coefficients of Bi2Te3:Sn can be explained by the existe
nce of resonant Sn states within the valence band. The existence of re
sonant Sn states was confirmed by codoping Bi2Te3:Sn with the electroa
ctive impurity I. (C) 1998 American Institute of Physics. [S1063-7834(
98)00908-3].