PROPOSAL OF A NOVEL IN-SITU STRESS-REDUCING METHOD FOR THE GROWTH OF C-BN

The huge intrinsic stress in c-BN films has been clearly reduced by po st-deposition ion implantation treatment. It seems that implantation i nduced lattice atom displacement processes are responsible for stress minimizing. On the base of these findings a novel and complex depositi on process includes in situ implantation elements will be proposed. An additional ion source can generate in situ defined displacement event s beneath the actual growth volume in order to reach a significant rel axation of stress states in the just grown c-BN structure. (C) 1998 Pu blished by Elsevier Science S.A. All rights reserved.