SIMULATION AND ANALYSIS OF X-RAY PHOTOEMISSION AND AUGER VALENCE-BANDSPECTRA OF HYDROGENATED AMORPHOUS-SILICON

Citation
Bw. Clare et al., SIMULATION AND ANALYSIS OF X-RAY PHOTOEMISSION AND AUGER VALENCE-BANDSPECTRA OF HYDROGENATED AMORPHOUS-SILICON, Thin solid films, 326(1-2), 1998, pp. 160-165
Citations number
13
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
326
Issue
1-2
Year of publication
1998
Pages
160 - 165
Database
ISI
SICI code
0040-6090(1998)326:1-2<160:SAAOXP>2.0.ZU;2-7
Abstract
The X-ray photoemission (XPS) and Auger electron spectra (AES) of amor phous silicon have been simulated using the semi-empirical quantum mec hanical molecular modelling package, MOPAC. The calculated spectra com pare well with those obtained experimentally and provide a basis for t hr interpretation and analysis of the features in the experimental spe ctra. Changes in the spectra as a result of hydrogenation of the mater ial are also analysed. The results of this study illustrate how simula tion of XPS and AES spectra can be used to obtain semi-quantitative in formation about the hydrogen content and the type of Si-H bonding pres ent in amorphous silicon alloys. (C) 1998 Elsevier Science S.A, All ri ghts reserved.