Ys. Jeong et al., FILM THICKNESS EFFECT ON THE PROPERTIES OF INTERCONNECTION BETWEEN YBCO AND SI FOR SUPERCONDUCTOR AND SEMICONDUCTOR INTEGRATION, Applied superconductivity, 5(7-12), 1997, pp. 353-356
YBa2Cu3O7-delta (YBCO) films were grown on Si using a buffer layer of
yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconn
ections between the YBCO film and the Si substrate using Au have been
fabricated by lithography. The YBCO films showed zero-resistance criti
cal temperatures in the range of 80-85 K and were found to be grown in
the c-axis orientation. The structural properties of the films of var
ious thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Bec
ause of very different thermal expansion coefficients of Si and YBCO,
there is a tendency to crack formation for films. The crack formation
interrupts the current flow and increases the normal state resistance
of the films. The effect of cracks on the contact resistances between
YBCO films of various thicknesses and Si substrates through Au interco
nnections is reported. (C) 1998 Elsevier Science Ltd. All rights reser
ved.