HIGH-RESISTANCE HTS SNS EDGE JUNCTIONS

MTS SFQ digital circuit applications require high resistance HTS Josep hson junctions. We have investigated the factors affecting the resista nce of SNS edge junctions which use Go-doped Y-Ba-Cu-O as the normal m etal layer. Several parameters are found to have a surprisingly large effect on device resistance, including edge angle, base electrode mate rial, and deposition conditions of the normal metal and counterelectro de. Controlling these factors has enabled the fabrication of high-qual ity, high-resistance (approximate to 1 Omega) SNS edge junctions with 1-sigma I-c spreads down to 10% and critical currents and IcRn product s suitable for SFQ digital applications. (C) 1998 Elsevier Science Ltd . All rights reserved.