ON THE EVAPORATION PROCESS OF THE GE-SE-TL SYSTEM

The process of vacuum evaporation and condensation in the Ge-Se-Tl sys tem is investigated. The kinetics of the processes are studied at evap oration temperatures from 560 to 905 K and substrate temperatures from 290 to 400 K. The evaporation energy as function of the thallium cont ent at a constant ratio Ge/Se is in the range from 126 to 157 kJ/mol. The condensation energy is in the range from 5.99 to 7.03 kJ/mol. The electron microscope investigation provides information about the morph ology of the films. The film composition has been investigated by Auge r electron spectroscopy.