EFFECT OF CURRENT-DENSITY ON THE SERIES RESISTANCE OF SDR (N(-BAND()NP(+)) SILICON IMPATT DIODE IN THE X)

The variation of the electrical series resistance with the experimenta l operating bias current densities have been simulated using a realist ic computer analysis of n(+)np(+) Si IMPATT diode of the type HP 5082- 0432 of capacity 0.02 pF based on the de and small signal properties i n the X band. The spatial distribution of the negative resistivity alo ng the depletion layer has been plotted at the experimental operating conditions. The results for the series resistance fit well with the de vice data and it is observed that the value of series resistance decre ases negligibly although the diode operating frequency increases with the increase of the bias current.