GROWTH OF ORIENTED, SINGLE-PHASE LA1-XCAXMNO3 THIN-FILMS BY PHYSICAL VAPOR CODEPOSITION

Authors
RATHNAYAKA KDD PARASIRIS A ANDREWS C CHEPIN J BHATNAGAR AK DUMAR AC NAUGLE DG
Citation
Kdd. Rathnayaka et al., GROWTH OF ORIENTED, SINGLE-PHASE LA1-XCAXMNO3 THIN-FILMS BY PHYSICAL VAPOR CODEPOSITION, Materials letters, 37(1-2), 1998, pp. 21-26
Citations number
11
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
37
Issue
1-2
Year of publication
1998
Pages
21 - 26
Database
ISI
SICI code
0167-577X(1998)37:1-2<21:GOOSLT>2.0.ZU;2-X
Abstract
La1-xCaxMnO3 thin films with varying compositions (0.65 > x > 0.20) ha ve been grown by codeposition of La, Ca and Mn onto single crystal LaA lO3 substrates heated to about 600 degrees C in 10(-5) Ton of oxygen. Post-deposition anneals of the films at about 900 degrees C in pure fl owing oxygen improve the magnetoresistive behavior of the films which show changes of resistance characteristic of colossal magnetoresistanc e between fields of 5 T and 0 with temperatures for the resistance pee ks near room temperature. The annealed films have been characterized b y resistance, magnetoresistance and thermopower measurements. (C) 1998 Elsevier Science B.V. All rights reserved.