STACKING-FAULTS IMAGED BY SCANNING-TUNNELING-MICROSCOPY

Stacking faults formed in alpha(1) plate of Cu-27.1Zn-3.6Al (wt.%) all oy have been investigated by scanning electron microscopy (SEM) and sc anning tunneling microscopy (STM) in this paper. In both etched and un etched (surface relief) specimens, stacking faults are observed in ct, plates by STM. The spacing of the fault fringes is irregular, ranging among 30.0-80.0 nm and are due to 2 H random stacking faults caused b y transition strain. The undulation of these stacking faults is ca. 8. 0-12.0 nm. (C) 1998 Elsevier Science B.V. All rights reserved.