Y. Zhao et al., THE MECHANISM OF SUPERCONDUCTIVITY SUPPRESSION IN THE YBASRCU3-XSNXOYSYSTEM, Physica. C, Superconductivity, 252(3-4), 1995, pp. 381-388
Carrier concentration, superconductivity, and crystal structure in a s
eries of YBaSrCu3-xSnxO3 samples (0 less than or equal to x less than
or equal to 0.25) have been investigated. The X-ray diffraction analys
is and structural computer simulations reveal that at low doping level
s (x < 0.15) Sn preferentially occupies the Cu(1) site, but gradually
goes into both the Cu(1) and Cu(2) site at higher doping levels. The r
ate of T-c suppression caused by Sn doping is significantly slower for
low dopant concentrations than for high dopant concentrations, indica
ting that different mechanisms operate at the Cu(1) and Cu(2) sites. T
he hole concentration, determined by both Hall effect and oxygen conte
nt, shows a systematic decrease with the dopant concentration. Our res
ults suggest that one of the mechanisms of the superconductivity suppr
ession is the reduction of the carrier concentration, which dominates
the T-c-x relationship at low dopant concentrations. Another mechanism
may be the impurity-scattering effect caused by the Sn doping at CuO2
planes which is responsible for the dramatic suppression of T-c at hi
gh dopant concentrations. The doping behaviour in the present system a
nd in the Sr free system are also compared.