RAMAN-SCATTERING FROM CURRENT CARRIERS IN SOLIDS

Raman scattering from free carriers in semiconductors is discussed. Di fferent mechanisms of light scattering are considered on the basis of the integrated cross section analysis. The typical band structure of s emiconductors is taken into account. It is demonstrated that the shape of Raman spectra allows one to define both the parameters of the band structure and the kinetic characteristics of the current carriers (di ffusion coefficient, mobility, diffusivity, inter-valley relaxation ti me, components of the relaxation time tensor of different symmetry). S pecial attention is paid to p-materials with degenerate bands and to c urrent carriers in superlattices.