COLD-FIELD-EMISSION TEST OF THE FATIGUED STATE OF PB(ZRXTI1-X)O-3 FILMS

Fatigue phenomena occurring in Pb(ZrxTi1-x)O-3 ferroelectric thin-film capacitors (FECAP) with Pt electrodes are studied by means of conduct ion measurements in the cold-field-emission (tunneling) regime. We hav e determined that conduction in virgin FECAPs is controlled by tunneli ng at temperatures 100-140 K and electric fields (2.3-3.0 MV/cm). The Fowler-Nordheim equation successfully describes observed current-volta ge relations for reasonable values of the semiconductor parameters of the system. Fatigue of the switching polarization induced by bipolar v oltage cycling provokes a substantial increase in tunneling conduction , shifting the I-V curve to lower fields by some 0.5 MV/cm. The partia l restoration of the switching polarization produced by heating of the sample up to 490 K results in a complete restoration of the initial c urrent-voltage characteristic. It is shown that the fatigue-induced in crease in conduction can be modeled by the charging of an interfacial layer of a thickness comparable with the tunneling length. This interp retation is consistent with a fatigue scenario related to the space-ch arge-assisted blocking of near-by-electrode centers of domain nucleati on. (C) 1998 American Institute of Physics. [S0003-6951(98)03536-0].