SB MEDIATED C-60 THIN-FILM GROWTH ON MICA

Authors
Citation
Wt. Xu et al., SB MEDIATED C-60 THIN-FILM GROWTH ON MICA, Applied physics letters, 73(10), 1998, pp. 1367-1369
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
10
Year of publication
1998
Pages
1367 - 1369
Database
ISI
SICI code
0003-6951(1998)73:10<1367:SMCTGO>2.0.ZU;2-K
Abstract
We studied the growth of C-60 thin films on a layer of surfactant Sb w hich was predeposited on mica substrates with vacuum vapor deposition method. It was found that the growth behaviors of C-60 films are signi ficantly affected by the surfactant Sb and the substrate temperature. (112)- and (111)-oriented C-60 single-crystal films with large C-60. S ingle crystals were obtained when the substrate temperatures were 200 and 215 degrees C, respectively. The growth mechanisms of the Sb media ted C-60 films were attributed to the reduced surface diffusion rate o f adsorbed C-60 molecules and the lowered boundary potential energy of C-60 islands by surfactant Sb. (C) 1998 American Institute of Physics . [S0003-6951(98)01133-4].