GROWTH OF GAN(0001) THIN-FILMS ON SI(001) BY PULSED REACTIVE CROSSED-BEAM LASER-ABLATION USING LIQUID GA AND N-2

Wurtzitic GaN films were grown by reactive crossed-beam pulsed laser d eposition at 248 nm (KrF) using a liquid Ga target and a synchronous N -2 pulse on atomically flat, initially two domain 2 X 1 reconstructed Si(001) substrates. The films were (0001) single phase for substrate t emperatures between 200 and 700 degrees C, and also grew in a twinned epitaxial manner with the crystallites oriented parallel to the [110] and [(1) over bar 10] in-plane directions of the Si(001) substrate bet ween 550 and 700 degrees C. Above 700 degrees C, no GaN could be detec ted and only Ga liquid films were produced. The films were subsequentl y investigated ex situ by x-ray diffraction, reflection high-energy el ectron diffraction, and photoluminescence, (C) 1998 American Institute of Physics. [S0003-6951(98)04736-6].