OPTICAL-PROPERTIES AND DEVICE APPLICATIONS OF (INGA)AS SELF-ASSEMBLEDQUANTUM DOTS GROWN ON (311)B GAAS SUBSTRATES

Citation
A. Polimeni et al., OPTICAL-PROPERTIES AND DEVICE APPLICATIONS OF (INGA)AS SELF-ASSEMBLEDQUANTUM DOTS GROWN ON (311)B GAAS SUBSTRATES, Applied physics letters, 73(10), 1998, pp. 1415-1417
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
73
Issue
10
Year of publication
1998
Pages
1415 - 1417
Database
ISI
SICI code
0003-6951(1998)73:10<1415:OADAO(>2.0.ZU;2-E
Abstract
We have studied the optical properties of (InGa)As self-assembled quan tum dots grown on (311)B-oriented GaAs substrates. The luminescence li newidth is considerably narrower than that of similar samples grown on (100). The difference is explained in terms of the in-plane coupling of dots which is more significant in (311)B. In order to assess the de vice potential of (311)B (InGa)As dots, we have studied the properties of edge emitting lasers by extending the well-known technology for (1 00) to the (311)B devices. (C) 1998 American Institute of Physics. [S0 003-6951(98)02136-6].