MODELING OF THE ION MASS EFFECT ON TRANSIENT ENHANCED DIFFUSION - DEVIATION FROM THE -MODEL(1)

The influence of ion mass on transient enhanced diffusion (TED) and de fect evolution after ion implantation in Si has been studied by atomis tic simulation and compared with experiments. We have analyzed the TED induced by B, P, and As implants with equal range and energy: TED inc reases with ion mass for equal range implants, and species of differen t mass but equal energy cause approximately the same amount of TED. He avier ions produce a larger redistribution of the Si atoms in the crys tal, leading to a larger excess of interstitials deeper in the bulk an d an excess of vacancies closer to the surface. For high-mass ions mor e interstitials escape recombination with vacancies, are stored in clu sters, and then contribute to TED. TED can be described in terms of an effective ''+n'' or ''plus factor'' that increases with the implanted ion mass. (C) 1998 American Institute of Physics. [S0003-6951(98)0183 6-1].