THICKNESS DEPENDENCE OF MICROWAVE SURFACE-RESISTANCE AND CRITICAL-CURRENT DENSITY IN AG-YBA2CU3O7-X THIN-FILMS

Citation
Vv. Srinivasu et al., THICKNESS DEPENDENCE OF MICROWAVE SURFACE-RESISTANCE AND CRITICAL-CURRENT DENSITY IN AG-YBA2CU3O7-X THIN-FILMS, Applied superconductivity, 6(1), 1998, pp. 45-48
Citations number
16
Categorie Soggetti
Material Science","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
09641807
Volume
6
Issue
1
Year of publication
1998
Pages
45 - 48
Database
ISI
SICI code
0964-1807(1998)6:1<45:TDOMSA>2.0.ZU;2-G
Abstract
Microwave surface resistance and critical current density are measured in Ag-doped YBa2YBa2Cu3O7-x thin films as a function of thickness of the film. The microwave surface resistance decreases monotonically as the thickness of the film is increased to an optimum thickness of 3000 Angstrom. Beyond this optimum thickness the microstructure of the fil m deteriorates and the surface resistance increases as the thickness i s further increased. Critical current density also increases as the th ickness of the film is increased to the optimum thickness. The decreas e in the value of surface resistance and an enhancement of J(c) up to optimum thickness has been explained in terms of defects formed in the films during growth. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.