Positron lifetime spectroscopy is used to study the long time room tem
perature behavior of defects retained after quench in beta-Cu-Zn-Al si
ngle crystals. Quenching treatments are made in a temperature range fr
om 493 to 1073 K. The decay in the defect concentration with the aging
time is attributed to the motion of vacancies to sinks. Assuming the
sinks as dislocations, a dislocation density is derived. This density
increases with increasing quenching temperature. We find that after lo
ng time aging all vacancies disappear for all T(q) used in this work e
xcept for 773 K. This behavior is associated to the existence of gamma
-phase precipitates which are known to be present after quench from th
is temperature.