COHERENT PLASMONS IN N-DOPED GAAS

Citation
R. Kersting et al., COHERENT PLASMONS IN N-DOPED GAAS, Physical review. B, Condensed matter, 58(8), 1998, pp. 4553-4559
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
8
Year of publication
1998
Pages
4553 - 4559
Database
ISI
SICI code
0163-1829(1998)58:8<4553:CPING>2.0.ZU;2-4
Abstract
Femtosecond laser excitation of bulk n-doped GaAs leads to coherent pl asmon excitations that emit intense submillimeter wave radiation. We i nvestigated the underlying plasmon dynamics in time-resolved experimen ts on the emitted THz radiation. The results show that THz pulses are emitted due to the coherent oscillation of the extrinsic electron plas ma in the hulk. The plasmon excitations are started by single-sided sc reening of the surface depletion field after photoexcitation. Temperat ure-dependent measurements indicate that the plasmon damping is due to phonon scattering.