MANY-BODY EFFECTS IN HIGHLY ACCEPTOR-DOPED GAAS ALXGA1-XAS QUANTUM-WELLS/

Authors
HOLTZ PO FERREIRA AC SERNELIUS BE BUYANOV A MONEMAR B MAURITZ O EKENBERG U SUNDARAM M CAMPMAN K MERZ JL GOSSARD AC
Citation
Po. Holtz et al., MANY-BODY EFFECTS IN HIGHLY ACCEPTOR-DOPED GAAS ALXGA1-XAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4624-4628
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
8
Year of publication
1998
Pages
4624 - 4628
Database
ISI
SICI code
0163-1829(1998)58:8<4624:MEIHAG>2.0.ZU;2-1
Abstract
The optical properties of quantum wells, which are center-doped with a ccepters up to the high doping regime, 1 x 10(19) cm(-3), have been st udied by means of photoluminescence and photoluminescence excitation s pectroscopy. The experimental results derived from the optical measure ments are compared with theoretical predictions on the self-energy shi fts of the subbands at high doping levels performed with self-consiste nt Hartree calculations with the inclusion of many-body effects.