PERCOLATION NETWORK IN A SMOOTH ARTIFICIAL POTENTIAL

Citation
Gm. Gusev et al., PERCOLATION NETWORK IN A SMOOTH ARTIFICIAL POTENTIAL, Physical review. B, Condensed matter, 58(8), 1998, pp. 4636-4643
Citations number
35
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
8
Year of publication
1998
Pages
4636 - 4643
Database
ISI
SICI code
0163-1829(1998)58:8<4636:PNIASA>2.0.ZU;2-O
Abstract
A percolation network of the edge states in an artificial potential of a gate-controlled antidot lattice has been studied in a high magnetic field. The longitudinal resistance of the antidot lattice shows a box like behavior in certain ranges of the magnetic field, because of the reflection of the topmost edge state by the saddle potential between t wo antidots. The riser between zero and quantized resistance shows a t emperature dependence due to the broadening of the percolation transit ion by inelastic scattering. The shift of the transition point in magn etic field with the temperature is found to originate from the mixing between Landau levels due to the inelastic scattering. It allows us to separate the exponent of the scattering mechanism and the critical ex ponent in the localization-delocalization transition.