PECULIARITIES OF PHOTOLUMINESCENCE IN PSEUDOMORPHIC MODULATION-DOPED AL0.2GA0.8AS IN0.1GA0.9AS/GAAS QUANTUM-WELLS/

Authors
KISSEL H MULLER U WALTHER C MASSELINK WT MAZUR YI TARASOV GG ZHUCHENKO ZY
Citation
H. Kissel et al., PECULIARITIES OF PHOTOLUMINESCENCE IN PSEUDOMORPHIC MODULATION-DOPED AL0.2GA0.8AS IN0.1GA0.9AS/GAAS QUANTUM-WELLS/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4754-4760
Citations number
34
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
8
Year of publication
1998
Pages
4754 - 4760
Database
ISI
SICI code
0163-1829(1998)58:8<4754:POPIPM>2.0.ZU;2-Q
Abstract
Peculiarities of photoluminescence (PL) spectra have been observed in the modulation-doped pseudomorphic strained-layer AlxGa1-xAs/InyGa1-yA s/GaAs heterostructures (x = 0.2, y = 0.1). In particular, the charact er of PL spectra dramatically depends on the quantum well width, chang ing from excitoniclike in wider wells to (two-dimensional) electron-he avy-hole band transitions in narrower quantum wells. Low-energy struct ure in the photoluminescence is weakly observed in the InyGa1-yAs quan tum well and interpreted in terms of a two-dimensional electron gas ho le bound to acceptor transitions.