We have investigated the transport properties of one-dimensional (1D)
constrictions defined by split-gates in high quality GaAs/AlxGa1-xAs h
eterostructures. In addition to the usual quantized conductance platea
us, the equilibrium conductance shows a structure close to 0.7(2e(2)/h
), and in consolidating our previous work [K. J. Thomas at al., Phys.
Rev. Lett. 77, 135 (1996)] this 0.7 structure has been investigated in
a wide range of samples as a function of temperature, carrier density
, in-plane magnetic field B-parallel to, and source-drain voltage V-sd
. We show that the 0.7 structure is not due to transmission or resonan
ce effects, nor does it arise from the asymmetry of the heterojunction
in the growth direction. All the 1D subbands show Zeeman splitting at
high B-parallel to and in the wide channel limit the g factor is \g\a
pproximate to 0.4, close to that of bulk GaAs. As the channel is progr
essively narrowed we measure an exchange-enhanced g factor. The measur
ements establish that the 0.7 structure is related to spin, and that e
lectron-electron interactions become important for the last few conduc
ting 1D subbands.