INVESTIGATION OF THE ROLE OF HOT HOLES AND HOT-ELECTRONS IN THE GENERATION OF INTERFACE STATES IN SUBMICROMETER MOSFETS USING A NEW CHARGE-PROFILING TECHNIQUE BASED ON CHARGE-PUMPING MEASUREMENTS

The roles of hot electrons and hot holes in the generation of interfac e states in MOSFETs have been a controversial issue, due to the differ ent interpretations of experimental data. In this article, a new physi cs-based charge-extraction algorithm, based on charge-pumping measurem ents, is used to investigate the roles of electrons and holes in the g eneration of interface states in submicrometre p-channel and n-channel MOSFETs. Our results show that while hot holes play an important role in the creation of interface states in submicrometre nMOSFETs, hot el ectrons are the main contributors to the interface-state generation in submicrometre buried-channel pMOSFETs. Therefore different analysis i s required when characterizing the hot-carrier behaviour of pMOSFETs a nd nMOSFETs.