MINIBAND STRUCTURES AND EFFECTIVE MASSES OF N-TYPE DELTA-DOPING SUPERLATTICES IN GAN

Self-consistent electronic structure calculations of n-type S-doping s uperlattices (SLs) in GaN are performed using effective-mass theory an d local density functional theory. The electron bulk mass of cubic GaN is obtained from ab initio full potential linear augmented plane wave (FLAPW) band-structure calculations. For the SLs, self-consistent pot entials, subband levels, miniband dispersions and Fermi-level position s are calculated, assuming sheet donor concentrations up to 10(13) cm( -2) and periods between 50 Angstrom and 400 Angstrom which cover the w hole range between an isolated-well and SL regime. The miniband effect ive masses exhibit strong dependence on the SL wavevector. The confine ment effects in GaN n-type S-doping SLs are strong enough to be seen e xperimentally in transport and optical properties. A comparison of the results obtained for GaN with 8-doped layers in other III-V compounds , such as GaAs, is made.