ANALYSIS OF SI SI1-XGEX RETROGRADED DOUBLE-QUANTUM-WELL P-TYPE MOSFET/

An analytical model for a double Si/Si1-xGex QW-PMOS is developed for the determination of the threshold voltages and an estimate of the hol e densities in each conducting QW-channel including the silicon surfac e channel. Detailed analysis of the uncoupled retrograded double Si/Si 1-xGex QW-PMOS is carried out with varying structural and physical par ameters. The model adequately describes and predicts the best design c hoice of the double QW structure for optimum device performance. The p rocedure for the evaluation of the optimum structure is not just limit ed to QW-PMOSs in bulk silicon technology but can be also successfully applied for realizing QW-NMOS structures on relaxed Si1-xGex buffer l ayers.